SanDisk Goes Beyond HBF: Patent Bonds Processor onto NAND Tile, with HBM Stacks on Shared Interposer
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SanDisk Goes Beyond HBF: Patent Bonds Processor onto NAND Tile, with HBM Stacks on Shared Interposer

　　While SanDisk is speeding up the development of High Bandwidth Flash (HBF), a next-generation architecture that vertically stacks NAND, the company is also advancing additional memory concepts aimed at addressing structural capacity constraints.　　According to a U.S. patent (US 12,430,274 B2) filed and published by SanDisk earlier, the proposed design integrates a multi-core processor directly onto a CBA (CMOS Bonded to Array) memory tile — which itself combines a large NAND flash array with a CMOS logic layer.　　The integrated stack is then mounted on an interposer, with stacks of HBM semiconductor dies affixed around one or more sides of the combined stack, SanDisk notes.　　Rationale Behind the Design　　The design rationale behind SanDisk’s approach, as noted by Wccftech, is partly driven by the inherent limitations of HBM, particularly its relatively constrained capacity, as well as the challenges that HBF has yet to fully address, including latency, power efficiency, and system-level integration complexity.　　To overcome HBM’s capacity ceiling, SanDisk previously introduced its HBF architecture, which adopts a similar concept to HBM by vertically stacking multiple layers of NAND flash and connecting them via through-silicon vias (TSVs) to form a unified memory stack, according to Wccftech.　　While current HBM solutions typically offer 32–64GB per stack, HBF is designed to scale significantly higher, with reported capacity reaching up to 4TB. According to SanDisk, HBF is capable of closely matching HBM’s bandwidth while delivering 8-16x the capacity of HBM at a similar cost.　　However, despite NAND offering higher capacity at a lower cost, Wccftech also points out that it is positioned further from the compute die, resulting in slower data access compared to DRAM-based architectures. In response, SanDisk’s latest patent, as highlighted by the report, proposes a 3D stacking design in which a NAND flash tile, built using a CBA structure, is positioned beneath a compute tile such as an AI accelerator or GPU.　　Under this configuration, HBM DRAM would still be integrated on the same interposer, but would serve a distinct role within the overall memory-compute hierarchy, according to Wccftech. As highlighted by the report, this architecture allows HBM to handle immediate, high-speed memory operations, while the NAND flash layer within the memory tile is used for read/write-intensive workloads and large-scale data storage.
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Release time：2026-06-23 10:58 reading：125 Continue reading>>
Lenovo Reportedly Set for July Price Hikes Across Product Portfolio as Memory Costs Pressure PC Market
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Lenovo Reportedly Set for July Price Hikes Across Product Portfolio as Memory Costs Pressure PC Market

　　With memory prices remaining elevated, consumer electronics could be heading for another round of price increases. Chinese media outlet Lanjinger.com, citing sources familiar with the matter, reports that Lenovo plans to raise prices across its product lineup from July, broadly in line with the previous round of increases, after the 618 shopping festival ends.　　Notably, Lanjinger.com highlights this would not be Lenovo’s first price hike this year, pointing to March when the PC maker issued nationwide price adjustment notices and raised retail prices for some models by over RMB 1,000. The report adds it has already urged distributors to lock in inventory and secure current pricing ahead of the upcoming increase, with a formal notice expected to be issued by the end of June.　　The pricing pressure is spreading across the PC industry. Dell, as highlighted by the report, has already raised prices on certain products as well, with server prices increasing 20%–40%. Prices for desktops, notebooks, and workstations are also expected to see further significant hikes by July, the report suggests.　　A separate report from Sina also suggests the sharp rise in costs has put pressure on the entire PC industry, prompting several major vendors to begin raising prices as early as six months ago. Dell, according to Sina, increased prices across its commercial PC portfolio in late 2025, with hikes ranging from 10% to 30%.　　Memory Price Surge Drives PC Cost Pressure　　Surging memory prices have become a key driver behind rising costs for PC brands. Lanjinger.com, citing TrendForce data, reports that cumulative spot price increases for DRAM and NAND flash have exceeded 300%. By May 2026, the average price of PC-grade DDR4 8Gb memory had climbed to US$20, the highest level since TrendForce began tracking the market, according to the report.　　Against this backdrop, Taipei Times, citing TrendForce’s latest forecast, reports that global notebook shipments are now expected to decline 13% YoY in 2026, as soaring memory prices and tight CPU supply weigh on demand in the second half—marking a sharper downturn than the 9.4% drop projected in January.
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Release time：2026-06-11 10:33 reading：477 Continue reading>>
Apple May Debut M5 Ultra-Powered Mac Studio at WWDC, Boosting Demand for TSMC N3P and SoIC-mH
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Apple May Debut M5 Ultra-Powered Mac Studio at WWDC, Boosting Demand for TSMC N3P and SoIC-mH

　　Apple’s annual Worldwide Developers Conference (WWDC) is set to kick off on June 9. According to Commercial Times, beyond updates to Apple Intelligence, Siri, and macOS 27, market attention is focused on whether a next-generation Mac Studio powered by Apple’s M5 Ultra chip will also make an appearance.　　The M5 Ultra is expected to retain Apple’s UltraFusion dual-die architecture, combining two M5 Max dies and delivering interconnect bandwidth of more than 1,000GB/s. Specifications are rumored to include a 36-core CPU, an 84-core GPU, and up to 512GB of unified memory, the report adds.　　Notably, as the report highlights, TSMC’s N3P is expected to serve as the key manufacturing foundation for the M5 Ultra, potentially adding to demand for already tight 3nm capacity.　　TSMC’s SoIC-mH Emerges as Potential M5 Ultra Enabler　　TSMC’s advanced packaging is also expected to play a key role in boosting the performance of the M5 Ultra. According to institutional investors cited by Commercial Times, SoIC-mH could emerge as a core technology platform if Apple adopts a higher-density heterogeneous integration approach alongside its UltraFusion high-speed interconnect architecture.　　As TechNews notes, SoIC-mH uses a molded horizontal packaging architecture and integrates multiple chips directly at the wafer level through no-bump hybrid bonding technology. The approach can increase packaging density, improve signal transmission efficiency, and enhance thermal performance.　　In addition, TechPowerUp notes that TSMC’s SoIC-mH allows Apple to separate the CPU and NPU from the GPU. This enables Apple to scale CPU clusters and GPU dies independently, adding more cores as needed. The approach also gives Apple greater flexibility to expand its product lineup without pushing die sizes close to the 830 mm² reticle limit. According to the report, this can improve yields and reduce defects associated with larger silicon dies.　　Despite these potential advantages, the launch timing of the next-generation Mac Studio remains uncertain. According to Macworld, citing Bloomberg, supply-chain constraints are affecting production of Apple’s next-generation professional Macs and could delay the debut of the M5 Ultra-powered system until October 2026.　　Touchscreen MacBooks Could Create New Opportunities for TSMC　　Meanwhile, macOS 27 is another key focus of this year’s WWDC. Commercial Times notes that Apple is expected to strengthen touch support features, laying the groundwork for future touchscreen MacBooks through the early adoption of on-cell touch panel integration.　　Institutional investors cited by the report say that the shift toward OLED displays and touch-enabled MacBooks is expected to drive demand for upgraded display driver ICs, TDDI chips, and touch controllers, while also benefiting TSMC’s specialty process. The report adds that TSMC has completed reliability certification for its 16nm high-voltage process platform and is set to enter the yield-validation stage in 2026, potentially helping customers develop more competitive OLED display driver ICs.
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Release time：2026-06-09 13:50 reading：457 Continue reading>>
Nexperia China Says M<span style='color:red'>OS</span>FET, Logic IC Supply Chains Complete as Independent Operations Largely in Place
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Nexperia China Says MOSFET, Logic IC Supply Chains Complete as Independent Operations Largely in Place

　　After last year’s control dispute between Wingtech and Nexperia’s Netherlands headquarters sent shockwaves through the industry, Nexperia China now says it has made significant progress in building independent operations. According to EE Times China, Wingtech Chairwoman Ruby Yang announced on May 29 that Nexperia China has largely completed the setup of its independent operating system.　　Yang revealed that Nexperia China’s core management, R&D, and market teams are now fully based in China. The report notes that the company’s capacity and delivery capabilities have steadily recovered, while it continues to build a “China for China, China for Global” full-stack supply chain across wafer manufacturing, packaging and testing, and quality control.　　The announcement comes as Wingtech faces mounting pressure. According to ESM China, the company said on April 29 that its auditor issued a “disclaimer of opinion” on its 2025 financial report, triggering a delisting risk warning under relevant rules.　　Full-Stack Supply Chains Advance Across Key Product Lines　　In terms of product layout, Nexperia China currently covers three core business lines: MOSFETs, logic ICs, and bipolar transistors, including protection devices. Yang said none of the three previously had a fully domestic, full-stack supply chain. However, according to the report, MOSFET and logic IC products have now established such supply chains.　　The bipolar transistor line is being upgraded to a 12-inch platform and is expected to complete its full-stack domestic supply chain within 2026. Bipolar transistors entered small-batch mass production in March 2026, with capacity for protection devices such as ESD (Electrostatic Discharge) and TVS (Transient Voltage Suppressor) products expected to gradually come online in the second half of 2026, the report notes.　　Under the plan, 19 products are expected to be ready for supply by next month, covering more than 80% of demand, the report adds. Despite the severe supply-chain fallout from last year’s Wingtech-Nexperia control dispute, the report indicates that Nexperia China has maintained large-scale delivery capabilities. Since mid-October 2025, it has shipped more than 11 billion chips to over 800 customers.　　Wingtech Seeks Court Action in Nexperia Control Dispute　　Meanwhile, the battle for control of Nexperia has escalated further. According to South China Morning Post, Wingtech said last week that it had filed a lawsuit in a court in China’s southern Guangdong province against Nexperia and three of its executives. The suit demands the restoration of full corporate control and 8 billion yuan, or US$1.18 billion, in compensation.　　As Bloomberg notes, Wingtech asked the court to order the defendants to stop carrying out or supporting the disputed measures, including by withdrawing legal proceedings in the Netherlands and revoking a Dutch ministerial order issued last September under the Goods Availability Act. If the defendants fail to comply, Wingtech would seek the transfer of Nexperia and related subsidiaries to the company free of charge.
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Release time：2026-06-02 10:25 reading：622 Continue reading>>
Visit NOV<span style='color:red'>OS</span>ENSE at PCIM Europe 2026！
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Visit NOVOSENSE at PCIM Europe 2026！

　　We warmly invite you to visit NOVOSENSE at PCIM Europe 2026. Discover how NOVOSENSE empowers innovation across automotive electronics, renewable energy & power supply, and industrial control with a comprehensive portfolio of isolators, interfaces, drivers, sensors, signal chain, and power management ICs.　　Date: June 9–11, 2026　　Venue: Nuremberg Exhibition Centre, Germany　　Booth: Hall 4A, Booth 119　　✦ What to Expect ✦　　Functional safety ICs for safety-critical automotive systems　　One-stop body control & automotive lighting solutions　　SerDes and ultrasonic radar IC solutions for smarter mobility　　Technical presentations on high-voltage electric mobility and AI data center power systems　　✦ Highlights Preview ✦　　Functional Safety ICs for Safety-Critical Automotive Systems　　Isolated gate driver NSI6911F — certified by TÜV Rheinland to meet ISO 26262 ASIL D requirements, featuring up to 19A peak drive capability, ±150kV/μs CMTI, an integrated 12-bit isolated ADC, and advanced diagnostic functions for high-voltage applications such as traction inverters, OBCs, and DC-DC converters.　　ASIL B ultrasonic radar ASSP NSUC1800 and LED driver NSL21924FS , reflecting NOVOSENSE's expanding functional safety portfolio across sensors, signal chain, power management, and driver ICs.　　One-Stop Automotive Body Control & Lighting Solutions　　For BCM and ZCU applications, NOVOSENSE offers motor driver products for brushed DC motors, stepper motors, BLDC motors, relays, valves, and solenoids, supporting efficient, precise, and safe motor control.　　For automotive lighting, NOVOSENSE will showcase full-scenario LED driver solutions for ambient lighting, reading lights, headlighting, rear lighting, ISD/ISC lighting, grille lighting, and more, helping create safer, smarter, and more distinctive vehicle lighting experiences.　　Enabling Smarter Mobility with SerDes and Ultrasonic Radar IC Solutions　　SerDes chipset — NLS9116 single-channel serializer and NLS9246 four-channel deserializer, designed for cameras, displays, and domain controllers in ADAS and intelligent cockpit systems.　　AK2 ultrasonic radar ASSP — comprising the NSUC1800 sensor-side chip and NSUC1802 host-side interface conversion chip, providing a turnkey solution for applications such as UPA and APA.　　✦ Keynote Speeches ✦　　Join NOVOSENSE experts at PCIM Europe 2026 for in-depth technical presentations on how advanced semiconductor technologies are addressing the evolving demands of high-voltage electric mobility and AI data center power systems.　　E-Mobility & Energy Storage Stage　　Hall 6, Booth 220　　Topic: Evolution and Challenges of Gate Driver Technology for New Generation of xEV Powertrain System　　Time: June 9, 2026 | 15:25–15:45 (GMT+1)　　Speaker: Timmy Wu　　Topic: Enabling EV High-Voltage Safety with Advanced Isolated Sensing　　Time: June 11, 2026 | 12:05–12:25 (GMT+1)　　Speaker: Lillian Liu　　AI & Data Centers Stage　　Hall 5, Booth 320　　Topic: Power Density Scaling in AI Data Centers: From System Constraints to Semiconductor Device Challenges　　Time: June 9, 2026 | 14:35–14:55 (GMT+1)　　Speaker: Wenzhe Xu
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Release time：2026-05-14 11:40 reading：995 Continue reading>>
ARM CEO Says Agentic AI May Drive CPU Core Counts to 512 as GPU-CPU Ratios Become Less Relevant
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ARM CEO Says Agentic AI May Drive CPU Core Counts to 512 as GPU-CPU Ratios Become Less Relevant

　　The rise of agentic AI is fueling fresh debate over the future GPU-to-CPU balance in AI systems, with Arm CEO Rene Haas now weighing in on the discussion. According to a transcript published by Investing.com, Haas said that while CPUs may not outnumber GPUs on a chip basis, they could from a core-count perspective.　　Haas noted that overall CPU demand is likely to increase significantly as agentic AI scales, with data centers potentially requiring more than four times today’s CPU capacity. He said this could create a data center CPU market opportunity exceeding US$100 billion by 2030.　　At the same time, Haas emphasized that the industry is seeing not only an explosion in overall CPU demand, but also rapid growth in the number of cores per CPU. According to Haas, many agentic AI workloads involve independent jobs, flows, or batches running on dedicated CPU cores, increasing the need for higher-core-count processors.　　Haas used Blackwell, Rubin, and other large AI accelerators as examples, noting that these chips are already approaching reticle limits, meaning their size is constrained by the maximum area a lithography mask can print. In contrast, he said CPU core counts could still double or even quadruple over the coming years.　　Haas noted that the Arm AGI CPU already features 136 cores, significantly higher than many competing offerings. Looking ahead, he said the industry is likely to move toward 256-core and even 512-core CPU designs. He added that such high-core-count architectures play to Arm’s strengths, as efficiency per core becomes increasingly critical at larger scales.　　Mydrivers notes that AMD and Intel are moving in a similar direction. AMD’s 2nm Zen 6-based EPYC processors are already expected to reach up to 256 cores with SMT multithreading support, while Intel’s all-E-core Xeon processors have reached 288 cores, with the next generation expected to scale to as many as 512 cores.　　Regarding the Arm AGI CPU launched at the company’s Arm Everywhere event last quarter, Haas said customer response has been “very strong.” He added that customer demand across fiscal 2027 and fiscal 2028 has already exceeded US$2 billion, more than double the level projected at launch.
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Release time：2026-05-11 13:48 reading：701 Continue reading>>
NOV<span style='color:red'>OS</span>ENSE Launches Next-Generation Isolated CAN Transceiver NSI1150, Supporting ±70V Bus Fault Protection and Higher Data Rates
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NOVOSENSE Launches Next-Generation Isolated CAN Transceiver NSI1150, Supporting ±70V Bus Fault Protection and Higher Data Rates

　　NOVOSENSE today announced the launch of its new industrial-grade isolated CAN transceiver, the NSI1150 series. Built on NOVOSENSE's third-generation isolation technology, the device delivers ±70V bus fault protection and up to ±150kV/μs (typical) common-mode transient immunity (CMTI). Compared to the previous generation (NSI1050), the NSI1150 achieves a comprehensive improvement in reliability and noise immunity. It also integrates NOVOSENSE's proprietary CAN FD transceiver, supporting communication speeds of up to 5 Mbps.　　The NSI1150 is available in multiple package options, including SOW16, SOW8, SOP8, SOWW8, and DUB8, addressing diverse design requirements. It is well suited for high-voltage, high-noise, multi-node applications such as industrial automation and control, energy and power systems, as well as communications and servers.　　Reliability Upgrade for Harsh Environments　　The NSI1150 delivers industry-leading reliability and robustness, featuring a high CMTI of ±150kV/μs (typical) and ±70V bus fault protection, enabling it to effectively handle strong electromagnetic interference and ground potential differences in demanding environments.　　In addition, all pins support ±6kV HBM ESD protection and 10kV surge capability across the isolation barrier, ensuring stable communication even under extreme conditions. The device offers multiple isolation ratings—3 kVRMS, 5 kVRMS, and 7.5 kVRMS—to meet stringent safety requirements across various applications, reinforcing system protection in critical sectors such as industrial automation and energy infrastructure.　　Multiple Package Options for Flexible Design　　The NSI1150 is offered in five mainstream package options—SOW16, SOW8, SOP8, SOWW8, and DUB8—accommodating different space constraints and safety requirements. Among them, the newly introduced SOWW8 wide-body package provides up to 15 mm creepage distance, making it ideal for applications with strict creepage requirements, such as photovoltaic systems, EV charging stations, and industrial power supplies.　　This extended creepage distance simplifies safety certification processes and enables more flexible layout design for high power density systems. The diversified package portfolio further enhances design flexibility and accelerates time-to-market.　　"Isolation+" Portfolio Setting Industry Benchmark　　Leveraging its deep expertise and technological leadership in isolation, NOVOSENSE offers a comprehensive "Isolation+" portfolio, including digital isolators, isolated sensing, isolated interfaces, isolated power, and isolated drivers.　　NOVOSENSE is building a robust safety foundation for high-voltage systems with its full "Isolation+" ecosystem:　　"+" stands for enhanced safety: NOVOSENSE products deliver safety levels exceeding basic isolation standards, and build a more reliable system isolation safety boundary for customers' systems.　　"+" stands for full product ecosystem: With mature capacitive isolation technology IP as the cornerstone, expand into a complete product portfolio to provide one-stop isolation solutions.　　"+" stands for in-depth application empowerment: Meet the emerging needs of scenarios including electric vehicle high-voltage platforms, high-power photovoltaic-storage-charging systems, and high-integration, high-efficiency AI server power supplies, enabling system-level safety, reliability and efficiency.　　With its comprehensive "Isolation+" product strategy—anchored by core technology IP and a full ecosystem—NOVOSENSE continues to set the benchmark in isolation semiconductors, delivering one-stop isolation solutions to customers worldwide.　　Previous:
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Release time：2026-04-24 10:58 reading：978 Continue reading>>
ROHM Develops 5th Generation SiC M<span style='color:red'>OS</span>FETs with Approx. 30% Lower On-Resistance at High Temperatures
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ROHM Develops 5th Generation SiC MOSFETs with Approx. 30% Lower On-Resistance at High Temperatures

　　ROHM has developed the latest device of its EcoSiC™ series: the 5th Generation SiC MOSFETs optimized for high efficiency power applications. This technology is ideally suitable for automotive electric powertrain systems – such as traction inverters for electric vehicles (xEVs) – as well as power supplies for AI servers and industrial equipment such as data centers.　　In recent years, the rapid proliferation of generative AI and big data processing has accelerated the deployment of high-performance servers in the industrial equipment sector. The resulting surge in power density is placing a greater strain on power infrastructure, raising concerns about localized supply shortages. While smart grids that combine renewable energy sources (i.e., solar power) with existing power supply networks are emerging as a possible solution, minimizing losses during energy conversion and storage remains a key challenge.　　In the automotive sector, next-generation electric vehicles require extended cruising range and faster charging, creating demand for lower-loss inverters and higher performance onboard chargers (OBCs). Against this backdrop, the adoption of SiC devices capable of both low loss and high efficiency is increasing in high-power applications ranging from a few kilowatts to hundreds of kilowatts.　　As the first semiconductor company globally, ROHM was the first in the world to begin mass production of SiC MOSFETs in 2010, contributing to reducing energy losses by implementing SiC devices over a wide range of high-power applications, including offering an early lineup of products compliant with automotive reliability standards such as AEC-Q101. Furthermore, the 4th generation SiC MOSFETs, for which sample provision began in June 2020, have been adopted globally in automotive and industrial applications. They are available across a broad product portfolio, including both discrete devices and modules, supporting the rapid market adoption of SiC technology.　　The newly developed 5th Generation SiC MOSFETs achieve industry-leading low loss, driving the broader adoption of SiC technology. Through structural enhancements and manufacturing process optimization, ON resistance is reduced by approximately 30% during high temperature operation (Tj=175°C) compared to conventional 4th Generation products (under the same breakdown voltage and chip size conditions). This improvement contributes to making units smaller while increasing output power in high temperature applications such as traction inverters for xEVs.　　ROHM began supporting the bare dies business with 5th Generation SiC MOSFETs in 2025 and completed development in March 2026. Furthermore, starting from July 2026, ROHM will provide samples of discrete devices and modules incorporating 5th Generation SiC MOSFETs.　　Going forward, ROHM plans to expand its 5th Generation SiC MOSFET lineup with additional breakdown voltage and package options. ROHM will also continue to enhance its design tools and strengthen application support. By further promoting the implementation of SiC technology – now entering the mainstream phase – ROHM contributes to more efficient power utilization across a wide variety of high-power applications.　　Application ExamplesAutomotive Systems: xEV traction inverters, onboard chargers (OBCs), DC-DC converters, electric compressors　　Industrial Equipment: Power supplies for AI servers and data centers, PV inverters, ESS (Energy Storage Systems), UPS (Uninterruptible Power Supplies), eVTOL, AC servos　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops the core technologies needed to advance SiC devices completely in-house, from wafer fabrication and process development to packaging and quality control. At the same time, we have established a fully integrated production system that spans the entire manufacturing flow, solidifying our position as a leading SiC supplier.
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Release time：2026-04-24 10:34 reading：587 Continue reading>>
ROHM’s New Compact, Highly Reliable Package Added to Automotive 40V/60V M<span style='color:red'>OS</span>FET Lineup
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ROHM’s New Compact, Highly Reliable Package Added to Automotive 40V/60V MOSFET Lineup

　　ROHM has expanded its lineup of low-voltage (40V/60V) MOSFETs for automotive applications – such as main inverter control circuits, electric pumps, and LED headlights – by introducing latest products adopting the new HPLF5060 package (4.9mm × 6.0mm).　　In recent years, automotive low-voltage MOSFETs have been trending toward smaller packages, such as the 5060-size and even more compact options. However, this miniaturization introduces significant challenges for achieving reliable mounting, primarily due to narrow terminal spacing and leadless designs.　　To address these issues, the new HPLF5060 package offers a smaller footprint compared to the widely used TO-252 package (6.6mm × 10.0mm) while enhancing board-mount reliability through the adoption of gull-wing leads. Additionally, the use of copper clip junction technology enables high-current operation, making the HPLF5060 an ideal solution for demanding automotive environments.　　Mass production of new products using this package began in November 2025 (sample price: $3.5/unit, excluding tax).　　In addition to expanding the lineup of products using this package, mass production of the smaller DFN3333 (3.3mm × 3.3mm) package, which employs wettable flank technology, is scheduled to begin around February 2026. Furthermore, development has commenced on a TOLG (TO-Leaded with Gull-wing) package (9.9mm × 11.7mm) to further expand the lineup of high-power, high-reliability packages.　　☆ : Under Development　　Application Examples　　Main inverter control circuits, electric pumps, LED headlights, etc.　　EcoMOS™ Brand　　EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector. Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　・EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　Gull-Wing Leads　　A terminal structure that spreads outwards from both sides of the package. It achieves excellent heat dissipation along with increased mounting reliability. It is called “Gull-Wing” because its appearance resembles the wing of a seagull.　　Copper Clip Junction Technology　　A technology that uses copper clips (flat metal bridges) to connect chips and lead frames directly, replacing the conventional wire bonding method.　　Wettable Flank Technology　　A technology for plating the sides of the lead frame on bottom electrode packages such as QFN and DFN to improve mounting reliability.
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Release time：2026-02-25 17:46 reading：811 Continue reading>>
NOV<span style='color:red'>OS</span>ENSE and Inovance Automotive Co-Develop IC Solutions for Next-Generation Electric Drive Platforms
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NOVOSENSE and Inovance Automotive Co-Develop IC Solutions for Next-Generation Electric Drive Platforms

　　NOVOSENSE Microelectronics announced that two highly integrated ICs—an isolated sensing IC and a logic ASC IC—developed in close collaboration with Inovance Automotive, a leading supplier of intelligent electric vehicle components and solutions, have entered mass production on Inovance Automotive’s next-generation electric drive (e-drive) platform. The customized IC solutions offer higher integration and optimized performance, supporting the ongoing shift toward more integrated electric drive systems while enabling designs that meet increasingly stringent functional safety requirements.　　Conventional discrete electric drive designs rely on widely distributed components and complex wiring, often resulting in larger system size, higher power losses, slower response, and constrained reliability. As electric vehicles continue to demand longer driving range and higher output power, electric drive architectures are moving rapidly toward multi-in-one and highly integrated designs. In this context, semiconductor solutions must deliver greater functional integration while maintaining accuracy, reliability, and functional safety margins within limited space, without constraining system-level design flexibility.　　Building on more than a decade of experience in motor controller system architectures and functional safety, Inovance Automotive proactively defined the key functional and performance requirements for the isolated sensing IC and logic ASC IC at an early stage of development. In response to these requirements, NOVOSENSE integrated high-voltage LDO, isolated sensing amplifier, and isolated comparator into a single isolated sensing IC. This integration significantly reduces external component while enabling high-precision isolated voltage sensing, fast OV/UV protection, and more compact electric drive designs.　　The customized logic ASC IC further integrates multiple logic functions and supports frequency detection, enabling centralized handling of interface-related logic. This approach simplifies interface design, improves overall system integration, and supports more compact inverter layouts. At the same time, it helps reduce BOM cost and provides a solid foundation for optimizing functional safety architectures in electric drive and traction inverter systems.　　By replacing mature discrete circuits with integrated IC solutions, the collaboration delivers clear system-level benefits.　　Simplified architectures and fewer components reduce potential failure points and improve overall product robustness.　　Higher integration lowers PCB area requirements, creating additional headroom for increased power density.　　Standardized IC solutions also streamline development by reducing design and validation effort, helping shorten development cycles and accelerate time-to-market.　　"Electric drive systems are entering a phase where higher integration is becoming essential, and progress at the chip level increasingly translates into system-level advantages," said Zheng Chao, Director of the R&D Center at Inovance Automotive. "This collaboration combines our strengths in electric drive systems with NOVOSENSE’s expertise in automotive semiconductors. More importantly, it reflects an important capability upgrade for Inovance Automotive—we are not only developing high-performance power electronics products, but also participating from the outset in defining system architectures and core chips. We look forward to continuing our work with NOVOSENSE to shape next-generation electric drive platforms and deliver more competitive system solutions to OEMs."　　"NOVOSENSE and Inovance Automotive have established a strong foundation for collaboration," said Ye Jian, Product Line Director at NOVOSENSE. "This project demonstrates both our customer's confidence in our technology and our application-driven approach to innovation. By drawing on our long-standing expertise in isolation and interface technologies, we will continue to deliver high-precision, high-performance, and high-reliability IC solutions to support Inovance Automotive's next-generation electric drive platforms."　　NOVOSENSE's Isolation+ portfolio covers digital isolator, isolated sensing, isolated driver, isolated power, and isolated interface, with cumulative shipments exceeding two billion units as of October 2025. The company also offers a broad automotive interface portfolio—including CAN, LIN, SerDes, logic ICs, and level shifters—providing customers with one-stop automotive-grade isolation and interface solutions. Across the new energy vehicle electrical system, NOVOSENSE works with hundreds of component suppliers, delivering semiconductor solutions for traction inverter, onboard charger (OBC), DC/DC converter, and battery management system (BMS), spanning sensor, signal chain, power management IC, and MCU.
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Release time：2026-02-25 17:36 reading：1402 Continue reading>>

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