NOV<span style='color:red'>OS</span>ENSE Launches High-Performance 2-Wire Hall Switch MT72xx Series: Compact Design with System-Level Reliability
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NOVOSENSE Launches High-Performance 2-Wire Hall Switch MT72xx Series: Compact Design with System-Level Reliability

　　NOVOSENSE Microelectronics ("NOVOSENSE") has launched the MT72xx series, 2-wire current output Hall switches. The switches feature superior EMC performance, multiple sensing polarity options, and highly integrated design, achieving ASIL-A functional safety certification and full compliance with AEC-Q100 Grade 0 standards. Designed for long-wiring scenarios in vehicle body electronics and domain controller systems, the MT72xx series provides optimized solutions for seatbelt buckle detection, window lift motor control, and other automotive applications.　　Addressing Long Wiring Harness Challenges in Automotive　　With rapid advancement of automotive intelligence and electrification, increasingly complex vehicle body functions and highly integrated domain controllers have significantly extended wiring harnesses between sensors and control units. This introduces critical challenges including elevated signal interference risks, increased costs, and compromised system reliability.　　NOVOSENSE's MT72xx series delivers robust signal integrity while effectively reducing wiring complexity and lowering harness costs. Designed for long-wiring scenarios such as door lock detection, anti-pinch window control, power tailgate position sensing, seat adjustment, and seatbelt buckle detection, these devices provide stable current output with superior anti-interference capabilities, maintaining signal reliability even in extended wiring conditions.　　High Integration & Robustness for Automotive-Grade Standards　　Engineered for harsh automotive environments with strong EMI interference, the MT72xx series integrates a 100nF(only TO92S package)capacitor to enhance EMC/ESD performance, simplify peripheral configuration, and optimize BOM space, enabling flexible system architecture design. Compliant with AEC-Q100 Grade 0, the devices ensure long-term stability under extreme high-temperature conditions.　　Featuring multiple sensing polarity options (unipolar, omnipolar, latch) and adjustable sensitivity thresholds, the MT72xx series offers design flexibility to accommodate diverse magnet solutions and vehicle architectures, streamlining development and debugging processes.　　Comprehensive Resources to Accelerate Time-to-Market　　To expedite customer development, NOVOSENSEN provides dedicated MT72xx demo boards and magnetic simulation services. These resources enable rapid device validation, magnet solution matching, and cost-effective debugging, significantly shortening product deployment cycles.
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Release time：2025-07-14 14:25 reading：362 Continue reading>>
GigaDevice GD32C231 Series MCU — Redefining Cost-Performance, Unleashing New Potential
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GigaDevice GD32C231 Series MCU — Redefining Cost-Performance, Unleashing New Potential

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, today officially launched the value-packed GD32C231 series of entry-level microcontrollers, further expanding its Arm® Cortex®-M23 core product lineup. As the leader in China's largest Arm® MCU market, GigaDevice positions the GD32C231 series as a "high-performance entry-level" solution designed to offer more competitive options for applications including small home appliances, BMS (Battery Management Systems), small-screen display devices, handheld consumer products, industrial auxiliary controls, and automotive aftermarket systems.　　With over 2 billion cumulative MCU shipments and a mature supply chain, GigaDevice's newly launched GD32C231 series overcomes the performance limitations of traditional entry-level chips through innovative design. The series not only integrates a rich set of peripherals but also adopts an industrial-grade wide-voltage process and offers a comprehensive ecosystem. While maintaining exceptional cost-effectiveness, this affordable MCU supports more complex application scenarios, redefining value standards in the entry-level MCU market and ushering in a new era of "affordable yet high-spec" solutions.　　GD32C231 Series MCUs: The Ultimate Choice for Cost-Effectiveness　　The GD32C231 series MCUs deliver a significant upgrade in computing performance and peripheral features while maintaining excellent price competitiveness, achieving an ultra-high cost-performance balance. Built on Arm's advanced Cortex®-M23 core architecture, the series offers up to 10% higher performance than Cortex®-M0+, with clock speeds reaching 48MHz. It supports efficient processing capabilities such as integer division, greatly enhancing software execution efficiency.　　In terms of memory configuration, the series features 32KB to 64KB of highly reliable embedded Flash and 12KB of low-power SRAM, with full memory areas equipped with ECC error correction. To meet the demands of diverse applications, multiple package options are available, including TSSOP20/LGA20, QFN28, LQFP32/QFN32, and LQFP48/QFN48. Thanks to its highly integrated chip design, the series effectively reduces the number of external components, providing users with a bill-of-materials (BOM) cost-optimized solution.　　The Perfect Balance of Wide Voltage Support, Low Power, and Fast Wake-up Time　　The GD32C231 series delivers exceptional power flexibility and energy efficiency, supporting a wide operating voltage range from 1.8V to 5.5V and a broad temperature range from -40°C to 105°C. This makes it highly adaptable for deployment in harsh and demanding environments. Featuring multiple power management modes, the device consumes as little as 5μA in deep sleep mode and offers ultra-fast 2.6μs wake-up time - achieving an optimal balance between low power consumption and real-time performance. These capabilities make the GD32C231 ideal for battery-powered and portable applications.　　Reliable Operation for Safety-Critical Applications　　Engineered for reliability, the GD32C231 provides robust ESD protection - meeting 8kV contact discharge and 15kV air discharge standards. Full ECC error correction is applied across Flash and SRAM memory, helping to prevent data corruption. An integrated hardware CRC module further enhances data transmission integrity. These features ensure the MCU performs reliably in safety-critical environments such as industrial automation and automotive electronics.　　Highly Integrated Peripherals for Flexible Design　　The GD32C231 series integrates a comprehensive set of peripherals, significantly enhancing system integration and design flexibility:　　A 12-bit ADC with 13 external channels and 2 internal comparators for precise analog signal measurement.　　Up to 4 general-purpose 16-bit timers and 1 advanced 16-bit timer for versatile time-based operations.　　2 high-speed SPI interfaces (including quad QSPI at 24Mbps), 2 I²C interfaces (supporting Fast Mode+ at 1Mbit/s), and 3 UARTs (up to 6Mbps) for robust serial communication.　　An integrated 3-channel DMA controller and 1 I²S interface for efficient peripheral data handling.　　With support for up to 45 GPIOs in a 48-pin package, the GD32C231 offers excellent expandability for complex designs. These rich peripheral resources empower the MCU to meet the demands of a wide range of applications - from consumer electronics to industrial control systems - with ease and reliability.　　Full-Stack Ecosystem Support for Efficient Development　　The GD32C231 series is backed by a comprehensive development ecosystem designed to accelerate product design and time-to-market. Standard software libraries and resources are readily available on GigaDevice's official website.　　To support developers throughout the entire development cycle, GigaDevice provides extensive documentation, including datasheets, user manuals, hardware design guidelines, application notes, and porting references - enabling rapid onboarding for both hardware and software development. A complete SDK firmware package is also offered, featuring rich sample code and development board resources that cover everything from low-level drivers to advanced applications.　　The GD32 MCU family natively supports FreeRTOS, offering developers a lightweight, open-source, and high-efficiency real-time operating system. To streamline development even further, GigaDevice offers the GD32 Embedded Builder IDE - its proprietary development environment that integrates graphical configuration and intelligent code generation, reducing design complexity. The GD32 All-In-One Programmer supports essential Flash operations such as programming, erasing, reading, and option byte configuration. Meanwhile, the GD-Link debugger provides dual-mode SWD/JTAG support with plug-and-play functionality for a seamless debugging experience. GigaDevice also collaborates closely with third-party programming tool providers to offer customers a wide range of programming and debugging options.　　Additionally, the GD32C231 series is fully compatible with major international toolchains including Arm® Keil, IAR Embedded Workbench, and SEGGER Embedded Studio, ensuring flexibility across various development platforms. For typical use cases, GigaDevice provides robust application solutions and reference designs - helping developers shorten design cycles, simplify product validation, and accelerate the path to mass production.
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Release time：2025-07-10 14:22 reading：408 Continue reading>>
ROHM Develops an Ultra-Compact M<span style='color:red'>OS</span>FET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications
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ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

　　ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.　　With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity.　　In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).　　The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.　　For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.　　The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.　　Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.　　Key Product Characteristics　　Application Examples　　• Smartphones　　• VR (Virtual Reality) headsets　　• Compact printers　　• Tablets　　　　 • Wearables　　　　　　　　　　 • LCD monitors　　• Laptops　　　　 • Portable gaming consoles　　　 • Drones　　And other applications equipped with fast charging capability.　　Terminology　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A field-effect transistor (FET) featuring a metal oxide semiconductor structure (the most commonly used type). It consists of three terminals: gate, drain, and source. Applying a voltage to the gate (control terminal) regulates current flow from the drain to the source.　　N-channel MOSFETs turn ON when a positive voltage is applied to the gate relative to the source. A common-source configuration MOSFET integrates two transistor elements that share a single source terminal.　　ON-Resistance　　The resistance between the Drain and Source of a MOSFET when it is in the ON state. A smaller RDS(on) reduces power loss during operation.　　Breakdown Voltage　　The maximum voltage that can be applied between the drain and source terminals of a MOSFET without causing damage. Exceeding this limit results in dielectric breakdown, potentially leading to device failure or malfunction.　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from the wafer and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It offers superior physical properties over conventional silicon, enabling higher frequency operation with faster switching speeds. HEMT stands for High Electron Mobility Transistor.
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Release time：2025-07-08 17:04 reading：326 Continue reading>>
ROHM Introduces a New M<span style='color:red'>OS</span>FET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance
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ROHM Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance

　　ROHM has released of a 100V power MOSFET - RY7P250BM - optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.　　As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In particular, the growing use of generative AI and high-performance GPUs has created a need to simultaneously improve power efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V systems to more efficient 48V power architectures. Furthermore, in hot-swap circuits used to safely replace modules while servers remain powered on, MOSFETs are required that offer both wide SOA (Safe Operating Area) and low ON-resistance to protect against inrush current and overloads.　　The RY7P250BM delivers these critical characteristics in a compact 8080-size package, helping to reduce power loss and cooling requirements in data centers while improving overall server reliability and energy efficiency. As the demand for 8080-size MOSFETs grows, this new product provides a drop-in replacement for existing designs. Notably, the RY7P250BM achieves wide SOA (VDS=48V, Pw=1ms/10ms) ideal for hot-swap operation. Power loss and heat generation are also minimized with an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25°C), approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs in the same size.　　Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents. The RY7P250BM meets this demand, achieving 16A at 10ms and 50A at 1ms, enabling support for high-load conditions conventional MOSFETs struggle to handle.　　ROHM’s new product has also been certified as a recommended component by leading global cloud platform provider, where it is expected to gain widespread adoption in next-generation AI servers. Especially in server applications where reliability and energy efficiency are mission-critical, the combination of wide SOA and low RDS(on) has been highly evaluated for cloud infrastructure.　　Going forward, ROHM will continue to expand its lineup of 48V-compatible power solutions for servers and industrial equipment, contributing to the development of sustainable ICT infrastructure and greater energy savings through high-efficiency, high-reliability products.　　Application Examples　　• 48V AI server systems and power supply hot-swap circuits in data centers　　• 48V industrial equipment power systems (i.e. forklifts, power tools, robots, fan motors)　　• Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)　　• UPS and emergency power systems (battery backup units)　　Online Sales InformationSales Launch Date: May 2025　　Pricing: $5.50/unit (samples, excluding tax)　　Online Distributors: DigiKey™, Mouser™ and Farnell™　　The products will be offered at other online distributors as they become available.　　Applicable Part No: RY7P250BM　　EcoMOS™ BrandEcoMOS™ is ROHM's brand of silicon MOSFETs designed for energy-efficient applications in the power device sector.　　Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　TerminologyHot-Swap Circuit　　A circuit that enables components to be inserted or removed while the system remains powered on.　　It typically consists of MOSFETs, protection elements, and connectors, and is responsible for suppressing inrush current and protecting against overcurrent conditions, ensuring stable operation of the system and connected components.　　Power MOSFET　　A MOSFET designed for power conversion and switching applications. N-channel MOSFETs are the dominant type, turning on when a positive voltage is applied to the gate relative to the source. They offer lower ON-resistance and higher efficiency than P-channel variants. Due to their low conduction loss and high-speed switching performance, power MOSFETs are commonly used in power supplies, motor drives, and inverter circuits.　　SOA (Safe Operating Area)　　The defined range of voltage and current in which a device can operate reliably without risk of failure. Operating outside this boundary may result in thermal runaway or permanent damage. SOA is especially critical in applications exposed to inrush currents or overcurrent conditions.　　Low ON-resistance (RDS(on))　　The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) reduces power loss during operation.　　Inrush Current　　A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered on. Proper control of this current reduces stress on power circuit components, helping to prevent device damage and stabilize the system.
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Release time：2025-07-03 14:52 reading：269 Continue reading>>
GD32C231 Series MCU — Redefining Cost-Performance, Unleashing New Potential
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GD32C231 Series MCU — Redefining Cost-Performance, Unleashing New Potential

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, today officially launched the value-packed GD32C231 series of entry-level microcontrollers, further expanding its Arm® Cortex®-M23 core product lineup. As the leader in China's largest Arm® MCU market, GigaDevice positions the GD32C231 series as a "high-performance entry-level" solution designed to offer more competitive options for applications including small home appliances, BMS (Battery Management Systems), small-screen display devices, handheld consumer products, industrial auxiliary controls, and automotive aftermarket systems.　　With over 2 billion cumulative MCU shipments and a mature supply chain, GigaDevice's newly launched GD32C231 series overcomes the performance limitations of traditional entry-level chips through innovative design. The series not only integrates a rich set of peripherals but also adopts an industrial-grade wide-voltage process and offers a comprehensive ecosystem. While maintaining exceptional cost-effectiveness, this affordable MCU supports more complex application scenarios, redefining value standards in the entry-level MCU market and ushering in a new era of "affordable yet high-spec" solutions.　　GD32C231 Series MCUs: The Ultimate Choice for Cost-Effectiveness　　The GD32C231 series MCUs deliver a significant upgrade in computing performance and peripheral features while maintaining excellent price competitiveness, achieving an ultra-high cost-performance balance. Built on Arm's advanced Cortex®-M23 core architecture, the series offers up to 10% higher performance than Cortex®-M0+, with clock speeds reaching 48MHz. It supports efficient processing capabilities such as integer division, greatly enhancing software execution efficiency.　　In terms of memory configuration, the series features 32KB to 64KB of highly reliable embedded Flash and 12KB of low-power SRAM, with full memory areas equipped with ECC error correction. To meet the demands of diverse applications, multiple package options are available, including TSSOP20/LGA20, QFN28, LQFP32/QFN32, and LQFP48/QFN48. Thanks to its highly integrated chip design, the series effectively reduces the number of external components, providing users with a bill-of-materials (BOM) cost-optimized solution.GD32C231 Product Portfolio　　The Perfect Balance of Wide Voltage Support, Low Power, and Fast Wake-up Time　　The GD32C231 series delivers exceptional power flexibility and energy efficiency, supporting a wide operating voltage range from 1.8V to 5.5V and a broad temperature range from -40°C to 105°C. This makes it highly adaptable for deployment in harsh and demanding environments. Featuring multiple power management modes, the device consumes as little as 5μA in deep sleep mode and offers ultra-fast 2.6μs wake-up time - achieving an optimal balance between low power consumption and real-time performance. These capabilities make the GD32C231 ideal for battery-powered and portable applications.　　Reliable Operation for Safety-Critical Applications　　Engineered for reliability, the GD32C231 provides robust ESD protection - meeting 8kV contact discharge and 15kV air discharge standards. Full ECC error correction is applied across Flash and SRAM memory, helping to prevent data corruption. An integrated hardware CRC module further enhances data transmission integrity. These features ensure the MCU performs reliably in safety-critical environments such as industrial automation and automotive electronics.　　Highly Integrated Peripherals for Flexible Design　　The GD32C231 series integrates a comprehensive set of peripherals, significantly enhancing system integration and design flexibility:　　A 12-bit ADC with 13 external channels and 2 internal comparators for precise analog signal measurement.　　Up to 4 general-purpose 16-bit timers and 1 advanced 16-bit timer for versatile time-based operations.　　2 high-speed SPI interfaces (including quad QSPI at 24Mbps), 2 I²C interfaces (supporting Fast Mode+ at 1Mbit/s), and 3 UARTs (up to 6Mbps) for robust serial communication.　　An integrated 3-channel DMA controller and 1 I²S interface for efficient peripheral data handling.　　With support for up to 45 GPIOs in a 48-pin package, the GD32C231 offers excellent expandability for complex designs. These rich peripheral resources empower the MCU to meet the demands of a wide range of applications - from consumer electronics to industrial control systems - with ease and reliability.GD32C231 block diagram　　Full-Stack Ecosystem Support for Efficient Development　　The GD32C231 series is backed by a comprehensive development ecosystem designed to accelerate product design and time-to-market. Standard software libraries and resources are readily available on GigaDevice's official website.　　To support developers throughout the entire development cycle, GigaDevice provides extensive documentation, including datasheets, user manuals, hardware design guidelines, application notes, and porting references - enabling rapid onboarding for both hardware and software development. A complete SDK firmware package is also offered, featuring rich sample code and development board resources that cover everything from low-level drivers to advanced applications.　　The GD32 MCU family natively supports FreeRTOS, offering developers a lightweight, open-source, and high-efficiency real-time operating system. To streamline development even further, GigaDevice offers the GD32 Embedded Builder IDE - its proprietary development environment that integrates graphical configuration and intelligent code generation, reducing design complexity. The GD32 All-In-One Programmer supports essential Flash operations such as programming, erasing, reading, and option byte configuration. Meanwhile, the GD-Link debugger provides dual-mode SWD/JTAG support with plug-and-play functionality for a seamless debugging experience. GigaDevice also collaborates closely with third-party programming tool providers to offer customers a wide range of programming and debugging options.　　Additionally, the GD32C231 series is fully compatible with major international toolchains including Arm® Keil, IAR Embedded Workbench, and SEGGER Embedded Studio, ensuring flexibility across various development platforms. For typical use cases, GigaDevice provides robust application solutions and reference designs - helping developers shorten design cycles, simplify product validation, and accelerate the path to mass production.　　About GigaDevice　　GigaDevice Semiconductor Inc. is a global leading fabless supplier. Founded in April 2005, the company has continuously expanded its international footprint and established its global headquarters in Singapore in 2025. Today, GigaDevice operates branch offices across numerous countries and regions, providing localized support at customers' fingertips. Committed to building a complete ecosystem with major product lines – Flash memory, MCU, sensor and analog – as the core driving force, GigaDevice can provide a wide range of solutions and services in the fields of industrial, automotive, computing, consumer electronics, IoT, mobile, networking and communications. GigaDevice has received the ISO26262:2018 automotive functional safety ASIL D certification, IEC 61508 functional safety product certification, as well as ISO9001, ISO14001, ISO45001, and Duns certifications. In a constant quest to expand our technology offering to customers, GigaDevice has also formed strategic alliances with leading foundries, assembly, and test plants to streamline supply chain management. For more details, please visit: www.GigaDevice.com　　*GigaDevice, GD32, and their logos are trademarks, or registered trademarks of GigaDevice Semiconductor Inc. Other names and brands are the property of their respective owners.
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Release time：2025-06-30 14:52 reading：427 Continue reading>>
ROHM's SiC M<span style='color:red'>OS</span>FET Adopted for Mass Production in Toyota's New BEV
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ROHM's SiC MOSFET Adopted for Mass Production in Toyota's New BEV "bZ5" for the Chinese Market

　　~Integration in traction inverters extends the cruising range and improves performance~　　The power module equipped with ROHM Co., Ltd.'s 4th generation SiC MOSFET bare chip has been adopted in the traction inverter of Toyota Motor Corporation's (hereinafter "Toyota") new crossover BEV "bZ5" for the Chinese market.　　The "bZ5" is a crossover-type BEV jointly developed by Toyota, BYD TOYOTA EV TECHNOLOGY Co., Ltd. (hereinafter "BTET"), FAW Toyota Motor Co., Ltd. (hereinafter "FAW Toyota"), etc., and was launched by FAW Toyota in June 2025.　　The power module adopted this time has started mass production shipments from HAIMOSIC (SHANGHAI) Co., Ltd., a joint venture between ROHM and Zhenghai Group. ROHM's power solutions centered on SiC MOSFETs contribute to the extended range and enhanced performance of the new BEV.　　ROHM aims to complete the construction of the production line for the next-generation 5th generation SiC MOSFET by 2025, and is also accelerating the market introduction plans for the 6th and 7th generations, focusing on the development of SiC power devices. ROHM will continue to work on improving device performance and production efficiency, and strengthen the system to provide SiC in various forms such as bare chips, discrete components, and modules, promoting the spread of SiC and contributing to the creation of a sustainable mobility society.　　About the "bZ5"　　The "bZ5" is a crossover BEV jointly developed by Toyota, BTET, FAW Toyota, etc., with the concept of "Reboot." It features active and iconic styling and is designed to provide a personal space for young users known as Generation Z. The driving range is 550 km for the lower grade and 630 km (CLTC mode) for the higher grade. Reservations began on April 22, 2025, the day before the opening of the 2025 Shanghai Motor Show, attracting significant attention.　　About HAIMOSIC (SHANGHAI) Co., Ltd.　　HAIMOSIC (SHANGHAI) CO.,LTD. is a Joint venture initiated by Zhenghai Group Co., Ltd. (China) and ROHM Co., Ltd. (Japan). HAIMOSIC is mainly engaged in the R&D, design, manufacturing and sales of the silicon carbide power module, with an estimated annual capacity of 360,000 pieces/year. The total investment of the project is 450 million RMB and the registered capital is 250 million RMB. For more details, please visit HAIMOSIC's website: http://www.haimosic.com/
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Release time：2025-06-23 14:11 reading：378 Continue reading>>
Renesas Extends RZ/A MPU Line-up with RZ/A3M for Cost-Sensitive, Advanced HMI Solutions
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Renesas Extends RZ/A MPU Line-up with RZ/A3M for Cost-Sensitive, Advanced HMI Solutions

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced a new high-performance microprocessor (MPU) in the RTOS-based RZ/A series that meets the growing demands of advanced human-machine interface (HMI) systems. The new RZ/A3M MPU comes with large SDRAM, SRAM and RTOS support to facilitate the seamless execution of complex tasks and real-time graphical displays. The RZ/A3M drives video and camera output on large LCD panels with resolutions up to 1280x800, addressing the display requirements in next-generation home appliances, industrial and office automation, healthcare devices and building control systems.　　Similar to its existing RZ/A3UL, the RZ/A3M features a 64-bit Arm® Cortex®-A55 core with a maximum operating frequency of 1 GHz and 128 KB (kilobytes) of on-chip SRAM. By integrating high-speed 128MB DDR3L-SDRAM in a single System-in-Package (SiP), the device eliminates the complex task of designing a high-speed signal interface for connecting external memory.　　Reducing System Cost with Built-in Memory and Simplified PCB Design　　The RZ/A3M is designed to reduce system costs and accelerate development. It supports both external NAND and NOR flash via QSPI for data and code storage. Paired with a driver, high-capacity NAND flash offers a cost-effective option for memory expansion. Additionally, the RZ/A3M's BGA package has a unique pin layout with two main rows positioned on the outside edge. This layout simplifies PCB routing and enables a low-cost, dual-layer printed wiring board design, providing significant cost and time savings. This memory integration simplifies PCB design by reducing the routing complexity and minimizing layout constraints.　　“I’m pleased to launch the RZ/A3M, the first RZ product with large built-in memory targeting high-function video/animation HMI performance while keeping overall system costs low,” said Daryl Khoo, Vice President of the Embedded Processing Marketing Division at Renesas. “In addition, we aim to deliver a highly responsive user experience with high-quality, real-time graphics, and provide the ease of design and cost efficiency to help our customers build advanced HMI solutions quickly.”　　Comprehensive Development Environment　　Renesas offers a comprehensive HMI development environment that includes the Flexible Software Package (FSP), evaluation kits, development tools, and sample software. Graphical user interface (GUI) solutions from partner companies such as LVGL, Crank, SquareLine Studio, and Envox will be available for the RZ/A3M to facilitate rapid HMI graphics development.　　Key Features of RZ/A3M　　Arm Cortex-A55 CPU with a maximum operating frequency of 1GHz　　128KB SRAM with error correction, Built-in 128MB DDR3L SDRAM　　Graphics capabilities: LCD controller supporting resolutions up to 1280x800 (WXGA), parallel RGB and MIPI-DSI (4-lane) interfaces, 2D graphics drawing engine　　Peripheral functions: QSPI interface for serial NOR/NAND flash memory, SPI, I2C, SDHI, USB2.0, I2S, temperature sensor, timer　　Package: 244-pin LFBGA, 17mm x 17mm, 0.8mm pitch　　Renesas’ Comprehensive HMI Solutions　　Renesas offers a wide variety of HMI solutions ranging from the 32-bit RX and RA MCU families to the 64-bit RZ family supporting 4K displays. The RZ/A series, built on RTOS-based MPUs with fast startup, includes the new RZ/A3M, which delivers high-performance HMI capabilities with the same ease of use offered by MCUs using large memory capacity.　　Multi-HMI Winning Combination　　Renesas offers Multi-HMI Solution which combines the new RZ/A3M MPU with numerous compatible devices from its portfolio to offer HMI functions for appliances. These Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at renesas.com/win.
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Release time：2025-05-26 14:49 reading：500 Continue reading>>
Renesas Partners with Indian Government to Drive Innovation Through Startups and Industry-Academia Collaboration, Strengthening India’s Semiconductor Ecosystem
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Renesas Partners with Indian Government to Drive Innovation Through Startups and Industry-Academia Collaboration, Strengthening India’s Semiconductor Ecosystem

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced its partnership with the Ministry of Electronics & Information Technology (MeitY), Government of India, to support local startups and academic institutions in the field of VLSI and embedded semiconductor systems. Renesas also celebrated the expansion of its offices in Bengaluru and Noida to accommodateits growing R&D teams, with the inauguration ceremonies held today. This strategic move underscores Renesas’ commitment to innovation and excellence in India and aims to drive continued growth in the region.　　Renesas and the Centre for Development of Advanced Computing (C-DAC), an autonomous scientific society of MeitY, today signed and exchanged two Memoranda of Understanding (MOUs) under the MeitY Chips to Startup (C2S) programme (Note). These MOUs focus on 1) Supporting local startups by enabling them to drive technological advancement andpromote local manufacturing in alignment with the Make in India initiative; and 2) Enhancing industry-academia collaboration by fostering an innovative, product-focused mindset among students.　　Shri Ashwini Vaishnaw, Minister for Railways, Information & Broadcasting, and Electronics & Information Technology, Government of India; along with Malini Narayanamoorthi, India Country Manager and VP, MID Engineering, Analog & Connectivity Group at Renesas; and Rea Callendar, Head of Platform Adoption and Ecosystem Enablement at Altium, which joined forces with Renesas in August 2024, attended the celebration at the Noida office. Hidetoshi Shibata, CEO of Renesas, also joined virtually, underscoring the global significance of this milestone.　　India is a key market for Renesas, offering significant growth potential and access to a highly skilled talent pool. Renesas is committed to deepening its partnerships with local companies, startups, and universities, with the target to generate over 10 percent of itsglobal revenue from the Indian market by 2030. Recent collaborations include the OSAT factory project with CG Power and Stars Microelectronics in Gujarat and the MOU with IIT Hyderabad. Renesas is also expanding its operations in India, with plans to increase its headcount to 1,000 by the end of 2025. This growth initiative reinforces Renesas' long-term commitment to India and supports its ambition to become an employer of choice in this dynamic and fast-evolving market.　　"The inauguration of our expanded offices marks a significant milestone for Renesas in India. It reflects our unwavering commitment to innovation, excellence, and the nurturing of local talent. By building products in India, for India and the world, we continue to drive growth and deliver meaningful impact across the Indian market,” said Malini Narayanamoorthi, India Country Manager and VP, MID Engineering, Analog & Connectivity Group at Renesas. "We are proud to sign two MOUs under the MeitY C2S programme, focused on advancing research, fostering innovation, and nurturing product-focused engineers. These strategic collaborations align with the Make in India initiative, aiming to strengthen local design and manufacturing capabilities and empower homegrown talent to drive the future of industry."　　MOUs under MeitY C2S programme　　Renesas and C-DAC signed two MOUs to collaborate in the field of VLSI and embedded semiconductor systems, with the aim of supporting local startups and academic institutions to accelerate innovation and foster self-reliance in India’s semiconductor and product ecosystem. The C2S programme encompasses collaboration with over 250 academic institutions and R&D organizations across the country, including IITs, NITs, IIITs, government and private colleges, along with approximately 15 startups, creating a strong ecosystem for indigenous innovation.　　MOU for Startups: Renesas will help strengthen the product engineering capabilities of local startups by providing Renesas development boards and Altium Designer, the leading PCB design software.　　MOU for Academic Institutions: Renesas will support experiential learning by offering development boards, PCB education and training, Altium Designer software, and access to the Altium 365 cloud platform, aiming to empower the next generation of electronics engineers and nurture a community of innovators.　　Opening of new offices in Bengaluru and Noida　　In May, Renesas consolidated and relocated its existing offices in Bengaluru and Noida into new, state-of-the-art office spaces, marking a significant milestone in the company’s growth and expansion in India.　　The new Bengaluru office is Renesas’ largest site in India, encompassing world-class design teams, test labs, and comprehensive facilities to support employees. It brings together approximately 500 team members, including R&D engineers, business teams, and employees from the recently acquired Altium and Part Analytics, creating a unified and collaborative workspace. The facility is designed to leverage India’s rich talent ecosystem to drive the development of innovative products.　　The new Noida office brings the engineering and business teams together to accelerate the delivery of world-class high-performance compute solutions, driving automotive market growth through innovation, collaboration, and consistent execution. This strategic expansion reinforces Renesas’ commitment to investing in top-tier local talent and strengthening its capabilities in R-Car system-on-chip (SoC) solutions. Designed to integrate cutting-edge tools and workflows, the new Noida site will further enhance synergy across the global engineering team and support Renesas’ long-term strategy in this critical domain.　　(Note) Chips to Startup (C2S) programme: An initiative launched by the Indian government in December 2021 to boost semiconductor and display manufacturing in the country. C2S not only aims at developing specialized manpower in VLSI/Embedded System Design domain but also addresses each entity of the electronics value chain via specialized manpower training, creation of reusable IP repository, design of application-oriented Systems/ASICs/FPGAs, and deployment by academia/ R&D organization by way of leveraging the expertise available at Startups/MSMEs. For more details, please visit the C2S programme website.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, X, YouTube and Instagram　　(Remarks). All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.
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Release time：2025-05-14 14:21 reading：529 Continue reading>>
Semikron Danfoss’ Module with ROHM’s latest 2kV SiC M<span style='color:red'>OS</span>FETs Integrated into SMA’s Large Scale Solar System
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Semikron Danfoss’ Module with ROHM’s latest 2kV SiC MOSFETs Integrated into SMA’s Large Scale Solar System

　　SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system technology, adopts Semikron Danfoss’ Module with ROHM’s latest 2kV SiC MOSFETs inside its new large scale solar system “Sunny Central FLEX”, a modular platform designed to streamline and enhance grid connections for large-scale photovoltaic installations, battery storage systems, and emerging technologies.　　“ROHM’s new 2kV class SiC MOSFETs are designed to enable simple and highly efficient converter topologies for 1500V DC-links. It is developed with high reliability targets and cosmic radiation robustness – addressing the stringent conditions and extended converter lifetime requirements of the photovoltaic sector and beyond,” says Wolfram Harnack, President at ROHM Semiconductor GmbH. “The technology of our SiC device structure and integrated on-chip gate resistance eases device paralleling and simplifies high power module designs. The mass production has started,” adds Harnack.　　Semikron Danfoss’ SEMITRANS® 20 has designed for high power applications and fast-switching operations, it represents the next generation of power modules for large converters. SEMITRANS® 20 with ROHM’s 2kV SiC MOSFETs is an integral part of SMA’s Sunny Central FLEX. “Semikron Danfoss and ROHM have collaborated for over a decade, focusing primarily on the implementation of silicon carbide (SiC) in power modules. More recently, we have teamed up to integrate silicon IGBTs as well”, says Peter Sontheimer, Senior Vice President of Semikron Danfoss’ Industry division.　　“The new SEMITRANS® 20 offers simple, efficient solutions for 1500VDC applications. These modules are ideal for solar and energy storage inverters. Upcoming high-power electric truck chargers, as well as wind converters, will also benefit,” adds Sontheimer.　　"The cooperation between SMA, Semikron Danfoss and ROHM is proof of how the seamless integration of innovative technologies creates the conditions for future-oriented energy projects," said Bernd Gessner, Product Manager Power Conversion Systems at SMA. "The demands on these solutions are higher than ever. SMA has decades of expertise and fulfills the highest requirements in terms of performance, reliability, durability and flexibility. The fact that Sunny Central FLEX meets these highest future-proof standards is also the result of the excellent cooperation with our partners who share the same commitment to excellence."　　About SMA Solar Technology AG        As a leading global specialist in photovoltaic and storage system technology, the SMA Group is setting the standards today for the decentralized and renewable energy supply of tomorrow. SMA’s portfolio contains a wide range of efficient PV and battery inverters, holistic system solutions for PV and battery-storage systems of all power classes, intelligent energy management systems and charging solutions for electric vehicles and power-to-gas applications. Digital energy services as well as extensive services round off SMA’s range. SMA inverters installed throughout the world within the last 20 years with a total output of approximately 144 GW help avoid the emission of more than 64 million tons of CO2. SMA’s multi-award-winning technology is protected by more than 1,600 patents and utility models. Since 2008, the Group’s parent company, SMA Solar Technology AG, has been listed on the Prime Standard of the Frankfurt Stock Exchange (S92) and is listed on the SDAX index.　　About Semikron Danfoss        Semikron Danfoss is a global technology leader in power electronics. Our product offerings include semiconductor devices, power modules, stacks and systems. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainably and thus to significantly reduce overall CO2 emissions – facing one of the biggest challenges today. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity and service to deliver best-in-industry performance and for a sustainable future. Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. We employ more than 3,500 people in 28 locations across the world. Our global footprint with production sites in Germany, Brazil, China, France, India, Italy, Slovakia and the United States ensures an unmatched service for our customers and partners. We offer more than 90 years of combined expertise in power module packaging, innovation and customer applications – making us the ultimate partner in power electronics.
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Release time：2025-04-29 10:49 reading：440 Continue reading>>
NOV<span style='color:red'>OS</span>ENSE introduces NSDA6934-Q1: Automotive-grade Class D audio amplifier with digital input
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NOVOSENSE introduces NSDA6934-Q1: Automotive-grade Class D audio amplifier with digital input

　　NOVOSENSE recently announced the launch of the NSDA6934-Q1, a digital-input automotive-grade Class D audio amplifier designed for vehicle audio systems. Featuring four-channel audio output with up to 75W per channel, it supports low-latency mode and sampling rates up to 192kHz. The amplifier offers flexible switching frequencies, multiple modulation options, and comprehensive protection features, making it highly adaptable to various automotive audio system designs.　　Class D amplifiers: Driving the evolution of automotive audio　　As automotive electronics continue to advance, Class D amplifiers have emerged as the preferred choice for vehicle audio systems due to their high efficiency, low heat dissipation, and compact form factor. These amplifiers not only meet modern vehicles’ stringent energy efficiency demands but also enhance audio quality and power output within limited space, playing a key role in the evolution of automotive audio technology.　　Optimized Low-Latency Mode: Reducing Path Delay by Over 70%　　In automotive audio systems, amplifiers boost signals from the DSP (Digital Signal Processor) before transmitting them to the speakers. Traditional amplifiers can contribute to over 30% of total signal transmission latency, impacting system performance.　　The NSDA6934-Q1 features a unique low-latency mode that reduces transmission path delay by more than 70%, granting the DSP additional time for signal processing. This reduces DSP resource demands and enhances the effectiveness of RNC (Road Noise Cancellation). Additionally, the amplifier supports up to 192kHz sampling rates, delivering high-resolution audio with enhanced clarity and detail for an immersive in-car listening experience.　　Flexible Configurations to Suit Various Designs　　The NSDA6934-Q1 provides a wide range of switching frequencies and modulation options, allowing system engineers to optimize efficiency and size.　　Adjustable Switching Frequency (384kHz – 2.1MHz)　　At 384kHz, the amplifier achieves up to 93% efficiency, ideal for applications prioritizing power savings, though it requires a 10μH inductor for operation.　　At 2.1MHz, the amplifier supports a compact 3.3μH inductor, making it suitable for space-constrained smart cockpit integration.　　Selectable Modulation Modes (BD Mode & 1SPW Mode)　　BD Mode (50% duty cycle) ensures superior linearity at high power levels, making it ideal for high-output applications.　　1SPW Mode (20% duty cycle) reduces conduction losses, improving efficiency in low-power scenarios　　Additionally, the NSDA6934-Q1 supports TDM16 data format, ensuring seamless integration with mainstream audio interfaces. With eight selectable I2C addresses, it prevents communication conflicts among peripheral devices. It also features integrated PVDD voltage monitoring, eliminating the need for external resistor dividers and simplifying system wiring and debugging.　　Enhanced EMC Performance & Comprehensive Protection　　The NSDA6934-Q1 incorporates multiple EMC optimization techniques, including slew rate control, phase control, and three spread-spectrum modes (triangular wave, random spread, hybrid spread), helping customers pass system-level EMC tests efficiently.For system reliability, the amplifier integrates multiple intelligent protection and diagnostic functions, including:　　• I2C watchdog for real-time bus monitoring.　　• Thermal protection, which automatically reduces gain under high-temperature conditions.　　• AC/DC diagnostics for real-time power supply monitoring.　　• Comprehensive protection suite, including temperature alarms, over-temperature shutdown, undervoltage, overvoltage, and overcurrent protection, ensuring robust system stability.
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Release time：2025-04-24 17:19 reading：593 Continue reading>>

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